SI5509DC_08 Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
100.00
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
I_D = 5 A
0.15
T_A = 150 _C
10.00
T_A = 25 _C
1.00
0.10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
1.5
0.10
0.05
0.00
1
50
T_A = 125 _C
T_A = 25 _C
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
1.3
40
I_D = 250 mA
1.1
30
0.9
20
0.7
10
0.5
–50 –25
0 25 50 75 100 125 150
0
10^–4 10^–3
T_J – Temperature (_C)
Safe Operating Area, Junction-to-Case
100
10^–2 10^–1
1
Time (sec)
Limited by r_DS(on)
10
10 ms
1
0.1
T_A = 25 _C
Single Pulse
100 ms
1s
10 s
dc
10 100 600
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
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