SI5509DC_08 Datasheet, PDF (7/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
NĆCHANNEL
0.2
0.1
0.1 _0.05
0.02
0.01
10^–4
Single Pulse
10^–3
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90 _C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
0.2
0.1
0.1 _0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06
www.vishay.com
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