SI5509DC_08 Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
10
5
V_GS = 5 V thru 3 V
8
V_GS = 2.5 V
4
6
3
PĆCHANNEL
Transfer Characteristics
4
V_GS = 2 V
2
V_GS = 1.5 V
0
0.0
0.6
1.2
1.8
2.4
3.0
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.20
0.15
V_GS = 2.5 V
0.10
0.05
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
5
I_D = 3.9 A
4
V_GS = 10 V
3
V_GS = 16 V
2
T_C = 125 _C
1
T_C = 25 _C
0
0.0
600
T_C = –55 _C
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Capacitance
500
400
C_iss
300
200
100
0
0
C_rss
4
C_oss
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.4
V_GS = 4.5 V, I_D = 3.9 A
V_GS = 2.5 V, I_D = 2.9 A
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Q_g – Total Gate Charge (nC)
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8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06