SI5509DC_08 Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 mA
V_GS = 0 V, I_D = –250 mA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_D = 250 mA
I_D = –250 mA
I_D = 250 mA
I_D = –250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55 _C
V_DS = –20 V, V_GS = 0 V, T_J = 55 _C
V_DS v 5 V, V_GS = 4.5 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = 4.5 V, I_D = 5.0 A
V_GS = –4.5 V, I_D = –3.9 A
V_GS = 2.5 V, I_D = 3.9 A
V_GS = –2.5 V, I_D = –2.9 A
V_DS = 10 V, I_D = 5.0 A
V_DS = –10 V, I_D = –3.9 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
N-Channel
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
P-Channel
V_DS = –10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, V_GS = 5 V, I_D = 4.0 A
V_DS = –10 V, V_GS = –5 V, I_D = –3.9 A
Gate-Source Charge
Gate-Drain Charge
N-Channel
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.0 A
Q_gs
P-Channel
V_DS = –10 V, V_GS = –4.5 V, I_D = –3.9 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Min Typ^a Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
–20
0.7
–0.7
10
–15
18.4
–15.1
–3.4
2.2
mV/_C
2
V
–2
100
nA
–100
1
–1
mA
10
–10
A
0.043 0.052
0.074 0.090
W
0.068 0.084
0.128 0.160
10.4
S
8.2
N-Ch
P-CH
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
455
300
85
pF
95
50
65
4.4
6.6
4.1
6.2
3.8
5.7
3.9
5.9
nC
0.9
0.7
0.95
1.25
1.9
W
8
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Document Number: 73629
S–60417—Rev. A, 20-Mar-06