SI5509DC_08 Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

New Product
Si5509DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
15
5
V_GS = 5 V thru 3.5 V
12
V_GS = 3 V
4
NĆCHANNEL
Transfer Characteristics
9
V_GS = 2.5 V
6
3
V_GS = 2 V
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.20
3
2
1
0
0.0
600
T_C = 125 _C
T_C = 25 _C
T_C = –55 _C
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Capacitance
0.15
500
C_iss
400
0.10
V_GS = 2.5 V
300
0.05
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D – Drain Current (A)
Gate Charge
5
I_D = 4 A
4
V_GS = 10 V
3
V_GS = 16 V
2
200
C_oss
100
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5 A
1.4
1.2
V_GS = 2.5 V
I_D = 3.9 A
1.0
1
0.8
0
0
1
2
3
4
5
Q_g – Total Gate Charge (nC)
www.vishay.com
4
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 73629
S–60417—Rev. A, 20-Mar-06