SI4559ADY Datasheet, PDF (9/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

New Product
Si4559ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
0.20
I_D = 3.1 A
0.15
0.10
T_J = 25_C
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6
Single Pulse Power
50
0.4
40
I_D = 250 mA
0.2
30
0.0
20
–0.2
10
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–3
10^–2
10^–1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
I_DM Limited
100 600
10
Limited
by r_DS(on)
P(t) = 0.0001
Document Number: 73624
S–52667—Rev. A, 02-Jan-06
1
P(t) = 0.001
0.1
0.01
I_D(on)
Limited
T_A = 25 _C
Single Pulse
BV_DSS Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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