SI4559ADY Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 mA
V_GS = 0 V, I_D = –250 mA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
DV_DS/T_J
DV_GS(th)/T_J
V_GS(th)
I_D = 250 mA
I_D = –250 mA
I_D = 250 mA
II_D = –250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, V_GS = "20 V
V_DS = 60 V, V_GS = 0 V
V_DS = –60 V, V_GS = 0 V
V_DS = 60 V, V_GS = 0 V, T_J = 55 _C
V_DS = –60 V, V_GS = 0 V, T_J = 55 _C
V_DS w 5 V, V_GS = 10 V
V_DS p –5 V, V_GS = –10 V
V_GS = 10 V, I_D = 4.3 A
V_GS = –10 V, I_D = –3.1 A
V_GS = 4.5 V, I_D = 3.9 A
V_GS = –4.5 V, I_D = –0.2 A
V_DS = 15 V, I_D = 4.3 A
V_DS = –15 V, I_D = –3.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
N-Channel
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
P-Channel
V_DS = – 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 4.3 A
V_DS = –30 V, V_GS = –10 V, I_D = –3.1 A
Gate-Source Charge
Gate-Drain Charge
N-Channel
V_DS = 30 V, V_GS = 4.5 V, I_D = 4.3 A
Q_gs
P-Channel
V_DS = – 30 V, V_GS = –4.5 V, I_D = –3.1 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Min Typ^a Max Unit
N-Ch
60
V
P-Ch
–60
N-Ch
55
P-Ch
–50
mV
N-Ch
–6
P-Ch
4
N-Ch
1
P-Ch
–1
3
V
–3
N-Ch
P-Ch
100
nA
–100
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
20
P-Ch
–25
1
–1
mA
10
–10
A
N-Ch
P-Ch
N-Ch
P-Ch
0.046 0.058
0.1
0.120
W
0.059 0.072
0.126 0.150
N-Ch
15
S
P-Ch
8.5
N-Ch
P-CH
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
665
650
75
pF
95
40
60
13
20
14.5
22
6
9
8
12
nC
2.3
2.2
2.6
3.7
2
3
W
14
20
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Document Number: 73624
S–52667—Rev. A, 02-Jan-06