SI4559ADY Datasheet, PDF (8/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
25
25
V_GS = 10 thru 5 V
20
20
PĆCHANNEL
Transfer Characteristics
15
4V
10
5
3V
0
0
1
2
3
4
5
6
7
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
0.35
0.30
0.25
0.20
0.15
V_GS = 4.5 V
V_GS = 10 V
0.10
0.05
0.00
0
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
10
V_DS = 30 V
I_D = 3.1 A
8
6
4
2
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
www.vishay.com
8
15
10
T_C = 125 _C
5
25 _C
–55 _C
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
1000
Capacitance
800
C_iss
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
V_GS = 10 V
2.0 I_D = 3.1 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Document Number: 73624
S–52667—Rev. A, 02-Jan-06