SI4559ADY Datasheet, PDF (3/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

New Product
Si4559ADY
Vishay Siliconix
SPECIFICATIONS (T_J = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Dynamic^a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DD = 30 V, R_L = 8.8 W
I_D ^ 3.4 A, V_GEN = 4.5 V, R_g = 1 W
P-Channel
V_DD = –30 V, R_L = 12.5 W
I_D ^ –2.4 A, V_GEN = –4.5 V, R_g = 1 W
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Drain-Source Body Diode Characteristics
N-Channel
V_DD = 30 V, R_L = 8.8 W
I_D ^ 3.4 A, V_GEN = 10 V, R_g = 1 W
P-Channel
V_DD = –30 V, R_L = 12.5 W
I_D ^ –2.4 A, V_GEN = –10 V, R_g =1 W
Min Typ^a Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
15
25
30
45
65
100
70
105
15
25
40
60
10
15
30
45
ns
10
15
10
15
15
25
13
20
20
30
35
55
10
15
30
45
Continuous Source-Drain Diode Current
I_S
T_C = 25 _C
N-Ch
P-Ch
Pulse Diode Forward Current^a
I_SM
N-Ch
P-Ch
Body Diode Voltage
I_S = 1.7 A
N-Ch
V_SD
I_S = –2 A
P-Ch
Body Diode Reverse Recovery Time
t_rr
N-Ch
P-Ch
Body Diode Reverse Recovery Charge
Q_rr
N-Channel
I_F = 1.7 A, di/dt = 100 A/ms, T_J = 25 _C
N-Ch
P-Ch
Reverse Recovery Fall Time
P-Channel
N-Ch
t_a
I_F = –2 A, di/dt = –100 A/ms, T_J = 25 _C
P-Ch
Reverse Recovery Rise Time
t_b
N-Ch
P-Ch
2.6
–2.8
A
20
–25
0.8
1.2
V
–0.8
–1.2
30
60
ns
30
50
32
50
nC
35
60
25
16
ns
5
14
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 73624
S–52667—Rev. A, 02-Jan-06
www.vishay.com
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