SI4559ADY Datasheet, PDF (1/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

New Product
Si4559ADY
Vishay Siliconix
N- and P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
V_DS (V)
60
–60
r_DS(on) (W)
0.058 at V_GS = 10 V
0.072 at V_GS = 4.5 V
0.120 at V_GS = –10 V
0.150 at V_GS = –4.5 V
I_D (A)^a
5.3
4.7
–3.9
–3.5
Q_g (Typ)
6 nC
8nC
FEATURES
D TrenchFETr Power MOSFET
D 100 % R_g & UIS Tested
APPLICATIONS
D CCFL Inverter
RoHS
COMPLIANT
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
D₁
G₁
S₂
G₂
Top View
Ordering Information: Si4559ADY-T1—E3 (Lead (Pb)-free)
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 _C)
Pulsed Drain Current (10 ms Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 _C
T_C = 70 _C
T_A = 25 _C
T_A = 70 _C
T_C = 25 _C
T_A = 25 _C
L = 0.1 mH
T_C= 25 _C
T_C= 70 _C
T_A = 25 _C
T_A = 70 _C
V_DS
V_GS
I_D
I_DM
I_S
I_SM
I_AS
E_AS
P_D
T_J, T_stg
60
5.3
4.3
4.3^{b, c}
3.4^{b, c}
20
2.6
1.7^{b, c}
20
11
6.1
3.1
2
2^{b, c}
1.3^{b, c}
"20
–55 to 150
–60
–3.9
–3.2
–3.0^{b, c}
–2.4^{b, c}
–25
–2.8
–1.7^{b, c}
–25
15
11
3.4
2.2
2^{b, c}
1.3^{b, c}
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady-State
R_thJA
R_thJF
Notes
a. Based on T_C = 25 _C.
b. Surface Mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 110 _C/W for N-channel and P-channel.
Document Number: 73624
S–52667—Rev. A, 02-Jan-06
N-Channel
Typ
Max
55
62.5
33
40
P-Channel
Typ
Max
53
62.5
30
37
Unit
_C/W
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