SI4559ADY Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

New Product
Si4559ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.12
T_J = 150 _C
0.11
10
0.10
0.09
0.08
T_J = 25 _C
0.07
I_D = 4.3 A
0.06
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
0.04
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
3.0
Single Pulse Power, Junction-to-Ambient
25
2.8
20
2.6
I_D = 250 mA
2.4
15
2.2
10
2.0
1.8
5
1.6
1.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.01
0.1
Safe Operating Area
100
*r_DS(on) Limited
1
10
Time (sec)
100
1000
10
100 ms
1
0.1
0.01
T_A = 25 _C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
Document Number: 73624
S–52667—Rev. A, 02-Jan-06
0.001
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
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