SI4559ADY Datasheet, PDF (10/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C – Case Temperature (_C)
PĆCHANNEL
Power De-Rating, Junction-to-Foot
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
T_C – Case Temperature (_C)
Single Pulse Avalanche Capability
100
10
T_A
+
L@
BV *
I_D
V_DD
1
0.000001
0.00001
0.0001
T_A – Time In Avalanche (sec)
0.001
*The power dissipation P_b is based on T_J(max) = 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
www.vishay.com
10
Document Number: 73624
S–52667—Rev. A, 02-Jan-06