SI4559ADY Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 60-V (D-S) MOSFET

Si4559ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
NĆCHANNEL
Output Characteristics
20
18 ^{VGS = 10 thru 4 V}
16
14
12
10
8
6
4
2
3V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS – Drain-to-Source Voltage (V)
Transfer Characteristics
5
4
3
2
T_C = 125 _C
1
25 _C
0
–55 _C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.080
0.075
0.070
0.065
0.060
V_GS = 4.5 V
0.055
0.050
V_GS = 10 V
0.045
0.040
0 2 4 6 8 10 12 14 16 18 20
I_D – Drain Current (A)
1000
Capacitance
800
C_iss
600
400
200
C_oss
0 ^Crss
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 30 V
I_D = 4.3 A
8
6
On-Resistance vs. Junction Temperature
2.0
1.8
V_GS = 10 V
I_D = 4.3 A
1.6
1.4
4
1.2
1.0
2
0.8
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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4
Document Number: 73624
S–52667—Rev. A, 02-Jan-06