V23990-P629-F73-PM Datasheet, PDF (9/19 Pages) Vincotech – High efficiency dual boost

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
12
10
8
6
4
2
0
0
At
15
30
45
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
700
V
15
V
4
Ω
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
150
125
100
75
50
25
0
0
15
30
45
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
700
V
15
V
4
Ω
INPUT BOOST
V23990-P629-F73-PM
preliminary datasheet
BOOST FWD
Q_{rr High T}
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
8
6
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
4
2
Q_{rr Low T}
0
60
I C (A) ⁷⁵
0
5
10
At
T_j =
VR =
IF =
VGS =
25/126 °C
700
V
40
A
15
V
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
60
I C (A) ⁷⁵
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
175
150
125
100
75
I_{RRM High T}
I_{RRM Low T}
50
25
0
0
5
10
At
T_j =
V_R =
I_F =
V_GS =
25/126 °C
700
V
40
A
15
V
15
R Gon ( Ω)
20
BOOST FWD
15
R Gon ( Ω )
20
copyright Vincotech
9
Revision: 1