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| V23990-P629-F73-PM Datasheet, PDF (10/19 Pages) Vincotech – High efficiency dual boost | |||
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INPUT BOOST
V23990-P629-F73-PM
preliminary datasheet
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
7500
dI0/dt
dIrec/dt
6000
BOOST FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
10000
8000
4500
6000
3000
4000
1500
2000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/126 °C
700
V
15
V
4
â¦
Figure 19
IGBT/MOSFET transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
60
I C (A) 80
BOOST IGBT
0
0
5
10
At
Tj =
VR =
IF =
VGS =
25/126 °C
700
V
40
A
15
V
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
BOOST FWD
dI0/dt
dIrec/dt
15
R Gon ( â¦) 20
BOOST FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,65
K/W
IGBT thermal model values
R (C/W)
0,198
0,347
0,075
0,028
0,027
Tau (s)
0,495
0,111
0,015
0,001
0,004
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
1012
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,16
K/W
FWD thermal model values
R (C/W)
0,041
0,115
0,447
0,324
0,154
Tau (s)
5,298
1,001
0,186
0,053
0,012
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 1012
copyright Vincotech
10
Revision: 1
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