V23990-P629-F73-PM Datasheet, PDF (2/19 Pages) Vincotech – High efficiency dual boost

Tj=25°C, unless otherwise specified
Parameter
Boost IGBT Protection Diode
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
Power dissipation per Diode
Maximum Junction Temperature
Boost FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Maximum Ratings
Symbol
Condition
V23990-P629-F73-PM
preliminary datasheet
Value
Unit
V_RRM
I_F
I_FSM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
tp=10ms, sin 180°
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
1600
V
34
A
47
220
A
41
W
62
150
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
1200
V
37
A
50
150
A
82
W
125
175
°C
T_stg
-40…+125
°C
T_op
-40…+(Tjmax - 25)
°C
V_is
t=2s
DC voltage
4000
V
min 12,7
mm
min 12,7
mm
copyright Vincotech
2
Revision: 1