V23990-P629-F73-PM Datasheet, PDF (5/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-F73-PM
preliminary datasheet
Boost IGBT Protection Diode
Figure 1
Typical FWD forward current as
a function of forward voltage
I_F = f(V_F)
100
Boost IGBT Protection Diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
Boost IGBT Protection Diode
80
10⁰
60
40
20
0
0
At
t_p =
T_j = T_jmax-25°C
0,5
250
µs
T_j = 25°C
1
1,5
V F (V)
2
10^-1
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R_thJH =
tp / T
1,71
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10⁰
t p (s)
10¹²
Figure 3
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
100
Boost IGBT Protection Diode
80
60
40
20
0
0
50
100
At
T_j =
150
ºC
150
Th ( ^o C) 200
Figure 4
Forward current as a
function of heatsink temperature
I_F = f(T_h)
60
Boost IGBT Protection Diode
50
40
30
20
10
0
0
50
100
At
T_j =
150
ºC
150
Th ( ^o C)
200
copyright Vincotech
5
Revision: 1