V23990-P629-F73-PM Datasheet, PDF (7/19 Pages) Vincotech – High efficiency dual boost

INPUT BOOST
V23990-P629-F73-PM
preliminary datasheet
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
5
4
3
2
1
BOOST IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
4
3
2
1
0
0
20
40
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/126 °C
700
V
15
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_C)
6
5
4
3
2
1
0
0
15
30
45
With an inductive load at
T_j =
25/126 °C
V_DS =
700
V
V_GS =
15
V
R_gon =
4
Ω
0
60
80
I C (A)
0
5
10
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/126 °C
700
V
15
V
40
A
BOOST IGBT
E_{rec High T}
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
5
4
3
E_{rec Low T}
2
1
0
60
I C (A) 75
0
5
10
With an inductive load at
T_j =
25/126 °C
V_DS =
700
V
V_GS =
15
V
I_D =
40
A
BOOST IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
15
R_G (Ω)
20
BOOST IGBT
E_{rec High T}
E_{rec Low T}
15
R_G(Ω )
20
copyright Vincotech
7
Revision: 1