V23990-P629-F73-PM Datasheet, PDF (12/19 Pages) Vincotech – High efficiency dual boost

Figure 25
Safe operating area as a function
of drain-source voltage
I_C = f(V_CE)
10³
10²
10uS
10mS
1mS
100uS
10
100mS
DC
10
10¹
10²
At
D=
T_h =
V_GS =
T_j =
single pulse
80
ºC
15
V
T_jmax
ºC
INPUT BOOST
V23990-P629-F73-PM
preliminary datasheet
BOOST IGBT
Figure 26
Gate voltage vs Gate charge
V_GE = f(Qg)
15
12
BOOST IGBT
200V
600V
9
6
3
10³
V CE (V)
0
0
50
100
150
200
250
Qg (nC)
At
I_D =
40
A
copyright Vincotech
12
Revision: 1