V23990-P629-F73-PM Datasheet, PDF (16/19 Pages) Vincotech – High efficiency dual boost

V23990-P629-F73-PM
preliminary datasheet
Switching Definitions BOOST IGBT
Figure 5
Turn-off Switching Waveforms & definition of t_Eoff
120
%
100
E_off
P_off
80
Boost IGBT
I_{C 1%}
60
40
20
V_{GE 90%}
0
-20
-0,2
P_off (100%) =
E_off (100%) =
t_Eoff =
0
27,95
1,87
0,54
t_Eoff
0,2
kW
mJ
µs
0,4
0,6
time (us)
Figure 6
Turn-on Switching Waveforms & definition of t_Eon
300
%
P_on
250
Boost IGBT
200
150
E_on
100
50
0
-50
2,95
P_on (100%) =
E_on (100%) =
t_Eon =
V_{GE 10%}
t_Eon
3
3,05
3,1
27,95
kW
2,23
mJ
0,15
µs
V_{CE 3%}
3,15
3,2
time(us)
Figure 7
Gate voltage vs Gate charge (measured)
20
15
10
5
0
-5
-50
V_GEoff =
V_GEon =
V_C (100%) =
I_C (100%) =
Q_g =
0
50
100
0
V
15
V
700
V
40
A
178,86 nC
Boost IGBT
Figure 8
Turn-off Switching Waveforms & definition of t_rr
200
%
I_d
100
t_rr
Boost FWD
0
-100
fitted
I_{RRM 10%}
V_d
150
200
Qg (nC)
-200
-300
I_{RRM 90%}
I_{RRM 100%}
3
3,1
3,2
V_d (100%) =
I_d (100%) =
I_RRM (100%) =
t_rr =
700
V
40
A
-117
A
0,15
µs
3,3
3,4
time(us)
copyright Vincotech
16
Revision: 1