V23990-P629-F73-PM Datasheet, PDF (8/19 Pages) Vincotech – High efficiency dual boost

INPUT BOOST
V23990-P629-F73-PM
preliminary datasheet
Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1
0,1
t_f
0,01
0,001
0
15
30
With an inductive load at
T_j =
126
°C
V_DS =
700
V
V_GS =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
BOOST IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1
t_doff
t_don
t_r
45
60
I C (A) 75
0,1
t_f
0,01
0,001
0
5
With an inductive load at
T_j =
126
°C
V_DS =
700
V
V_GS =
15
V
I_C =
40
A
t_doff
t_don
t_r
10
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(I_C)
0,25
0,2
0,15
0,1
0,05
0
0
15
30
45
At
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
700
V
15
V
4
Ω
BOOST FWD
t_{rr High T}
t_{rr Low T}
60
I C (A) ⁷⁵
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0
5
10
At
T_j =
V_R =
I_F =
V_GS =
25/126 °C
700
V
40
A
15
V
BOOST IGBT
15
RG(Ω )
20
BOOST FWD
t_{rr High T}
t_{rr Low T}
15
R Gon ( Ω )
20
copyright Vincotech
8
Revision: 1