10-FY12NMA160SH01-M820F18 Datasheet, PDF (9/26 Pages) Vincotech – mixed voltage NPC topology

Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
12
10
8
6
4
2
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
FWD
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
FWD
10
Q_{rr High T}
8
6
Q_{rr Low T}
4
2
Q_{rr High T}
Q_{rr Low T}
0
0
At
T_j =
V_CE =
V_GE =
R_gon =
20
40
60
80
100 120 140 160 180 200
I_C(A)
25/125 °C
350
V
±15
V
4
Ω
0
0
4
8
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
100
A
±15
V
12
16
20
R_gon(Ω)
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
150
120
90
FWD
I_{RRM High T}
I_{RRM Low T}
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
150
120
90
FWD
60
60
I_{RRM High T}
I_{RRM Low T}
30
30
0
0
20
40
60
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
4
Ω
80
100 120 140 160 180 200
I_C(A)
0
0
4
8
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
100
A
±15
V
12
16
20
R_gon(Ω)
copyright by Vincotech
9
Revision: 1