10-FY12NMA160SH01-M820F18 Datasheet, PDF (14/26 Pages) Vincotech – mixed voltage NPC topology

10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
7
6
5
4
3
2
1
IGBT
E_{off High T}
E_{off Low T}
E_{on High T}
E_{on Low T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
7
6
5
4
3
2
1
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0
0
20
40
60
80
100 120 140 160 180 200
I_C(A)
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/126 °C
350
V
±15
V
4
Ω
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
5
FWD
E_{rec High T}
4
0
0
4
8
12
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/126 °C
350
V
±15
V
99
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
4
3
16
20
R_G(Ω)
FWD
E_{rec High T}
3
E_{rec Low T}
2
2
E_{rec Low T}
1
1
0
0
20
40
60
80
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
25/126 °C
350
V
±15
V
4
Ω
100
120
140
160
180
200
I_C (A)
0
0
4
8
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/126 °C
350
V
±15
V
99
A
12
16
20
R_G (Ω)
copyright by Vincotech
14
Revision: 1