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10-FY12NMA160SH01-M820F18 Datasheet, PDF (4/26 Pages) Vincotech – mixed voltage NPC topology
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Parameter
Halfbridge IGBT Inverse Diode
Forward voltage
Reverse current
Thermal resistance chip to heatsink per chip
Halfbridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
NP Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Symbol
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VF
Ir
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
7
1200
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,97
2,7
1,65
V
0,25
mA
2,24
K/W
VGE(th) VCE=VGE
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
td(off)
tf
Rgoff=4 Ω
Rgon=4 Ω
Eon
Eoff
Cies
Coss f=1MHz
Crss
QGate
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
15
0
20
±15
0
±15
0,006
Tj=25°C
Tj=125°C
5
5,80
6,5
V
160
Tj=25°C
Tj=125°C
1
2,02
2,70
2,37
V
1200
Tj=25°C
Tj=125°C
0,25
mA
0
Tj=25°C
Tj=125°C
480
nA
none
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
350
100
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
127
129
26
30
219
ns
274
45
59
1,52
2,60
2,69
mWs
4,19
9200
25
Tj=25°C
600
pF
540
960
160
Tj=25°C
740
nC
0,37
K/W
VF
150
Tj=25°C
1
2,00
2,6
Tj=125°C
1,88
V
Ir
700
Tj=25°C
Tj=125°C
50
µA
IRRM
Tj=25°C
86
Tj=125°C
113
A
trr
Tj=25°C
57
Tj=125°C
109
ns
Qrr Rgon=4 Ω
±15
350
100
Tj=25°C
Tj=125°C
2,93
7,16
µC
di(rec)max
/dt
Tj=25°C
Tj=125°C
3683
1519
A/µs
Erec
Tj=25°C
Tj=125°C
0,53
1,38
mWs
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1,11
K/W
copyright by Vincotech
4
Revision: 1
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