10-FY12NMA160SH01-M820F18 Datasheet, PDF (6/26 Pages) Vincotech – mixed voltage NPC topology

Figure 1
Typical output characteristics
I_C = f(V_CE)
300
250
200
150
100
50
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
25
°C
7 V to 17 V in steps of 1 V
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
Figure 2
Typical output characteristics
I_C = f(V_CE)
300
IGBT
250
200
150
100
50
4
5
V_CE (V)
0
0
1
2
3
At
t_p =
T_j =
V_GE from
250
µs
125
°C
7 V to 17 V in steps of 1 V
4
5
V_CE (V)
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
100
IGBT
80
60
T_j = T_jmax-25°C
40
20
T_j = 25°C
0
0
2
4
6
8
10
12
V_GE (V)
At
t_p =
250
µs
V_CE =
10
V
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
450
375
300
225
150
75
0
0
At
t_p =
T_j = T_jmax-25°C
T_j = 25°C
1
2
250
µs
FWD
3
4
V_F (V)
copyright by Vincotech
6
Revision: 1