10-FY12NMA160SH01-M820F18 Datasheet, PDF (8/26 Pages) Vincotech – mixed voltage NPC topology

Figure 9
Typical switching times as a
function of collector current
t = f(I_C)
1,00
0,10
0,01
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R_G)
1,00
t_doff
t_don
0,10
t_f
t_r
IGBT
t_doff
t_don
t_r
t_f
0,01
0,00
0,00
0
20
40
60
80
100
120
140
160
180
200
0
4
8
12
I_C(A)
With an inductive load at
With an inductive load at
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
R_gon =
4
Ω
R_goff =
4
Ω
T_j =
125
°C
V_CE =
350
V
V_GE =
±15
V
I_C =
100
A
Figure 11
Typical reverse recovery time as a
function of collector current
t_rr = f(Ic)
0,15
0,12
0,09
FWD
t_{rr High T}
t_{rr Low T}
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t_rr = f(R_gon)
0,25
0,20
0,15
0,06
0,10
0,03
0,05
0
0
20
40
60
80
100 120 140 160 180 200
I_C(A)
0,00
0
4
8
12
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
±15
V
4
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
100
A
±15
V
16
20
R_G(Ω)
FWD
t_{rr High T}
t_{rr Low T}
16
20
R_gon(Ω)
copyright by Vincotech
8
Revision: 1