10-FY12NMA160SH01-M820F18 Datasheet, PDF (19/26 Pages) Vincotech – mixed voltage NPC topology

Figure 25
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
60
50
40
30
20
10
T_j = T_jmax-25°C
0
0
1
T_j = 25°C
2
At
t_p =
250
µs
Figure 27
Power dissipation as a
function of heatsink temperature
P_tot = f(T_h)
60
50
40
30
20
10
0
0
50
100
At
T_j =
175
ºC
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
NP IGBT Inverse Diode
NP IGBT Inverse Diode
Figure 26
Diode transient thermal impedance
as a function of pulse width
Z_thJH = f(t_p)
10¹
NP IGBT Inverse Diode
10⁰
10^-1
3
4
V_F (V)
10^-2
10^-5
10^-4
10^-3
10^-2
At
D=
R_thJH =
tp / T
3,43
K/W
NP IGBT Inverse Diode
Figure 28
Forward current as a
function of heatsink temperature
I_F = f(T_h)
25
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10^-1
10⁰ _{102tp (s)}
10¹
NP IGBT Inverse Diode
20
15
10
5
0
150
200
Th (^oC)
0
50
100
At
T_j =
175
ºC
150
200
Th (^oC)
copyright by Vincotech
19
Revision: 1