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| 10-FY12NMA160SH01-M820F18 Datasheet, PDF (10/26 Pages) Vincotech – mixed voltage NPC topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
5000
4000
3000
2000
1000
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Half Bridge
Half Bridge IGBT and Neutral Point FWD
dIrec/dt T
dIo/dt T
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
7500
6000
FWD
dIrec/dt T
dI0/dt T
4500
3000
1500
0
0
20
40
60
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
±15
V
4
â¦
80
100 120 140 160 180 200
IC(A)
0
0
4
8
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
100
A
±15
V
12
16
20
Rgon(â¦)
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,37
K/W
IGBT thermal model values
R (C/W)
0,06
0,15
0,12
0,03
0,01
Tau (s)
2,4E+00
4,0E-01
1,0E-01
1,3E-02
8,4E-04
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 tp (s)
110012
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1,11
K/W
FWD thermal model values
R (C/W)
0,07
0,25
0,57
0,12
0,06
0,03
Tau (s)
6,8E+00
1,2E+00
2,8E-01
6,0E-02
1,3E-02
1,1E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
tp (s) 110012
copyright by Vincotech
10
Revision: 1
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