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| 10-FY12NMA160SH01-M820F18 Datasheet, PDF (17/26 Pages) Vincotech – mixed voltage NPC topology | |||
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Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
6000
dIrec/dt T
di0/dt T
5000
10-FY12NMA160SH01-M820F18
10-PY12NMA160SH01-M820F18Y
datasheet
Neutral Point
Neutral Point IGBT and Half Bridge FWD
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
9000
7500
FWD
dIrec/dt T
dI0/dt T
4000
6000
3000
4500
2000
3000
1000
1500
0
0
20
40
60
80
100 120 140 160 180 200
IC(A)
0
0
4
8
12
At
At
Tj =
VCE =
VGE =
Rgon =
25/126 °C
350
V
±15
V
4
â¦
Tj =
VR =
IF =
VGE =
25/126 °C
350
V
100
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
16
20
Rgon(â¦)
FWD
100
100
D = 0,5
D = 0,5
10-1
0,2
10-1
0,2
0,1
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0.000
0.000
10-2
10-5
10-4
10-3
10-2
10-1
100
tp (s) 101
10-2
10-5
10-4
10-3
10-2
10-1
100 102 tp (s) 101
At
At
D=
RthJH =
tp / T
0,99
K/W
D=
RthJH =
tp / T
1,15
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,08
0,24
0,52
0,09
0,05
0,02
Tau (s)
6,3E+00
1,1E+00
2,8E-01
6,6E-02
1,3E-02
1,2E-03
R (C/W)
0,05
0,13
0,59
0,22
0,10
0,07
Tau (s)
4,9E+00
8,2E-01
1,8E-01
4,7E-02
7,8E-03
9,8E-04
copyright by Vincotech
17
Revision: 1
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