TC55VCM416BTGN55 Datasheet, PDF(9/18 Page) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

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TC55VCM416BTGN55 Datasheet, PDF (9/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

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TIMING DIAGRAMS

READ CYCLE

Address

A0~A19

CE1

CE2

UB , LB

DOUT

I/O1~16

Hi-Z

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55

TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70

tRC

tACC

tOH

tCO1

tCO2

tOE

tOD

tBA

tODO

tBE

tOEE

tCOE

tBD

VALID DATA OUT

Hi-Z

WRITE CYCLE 1 (R/W CONTROLLED)

Address

A0~A19

R/W

CE1

CE2

UB , LB

DOUT

I/O1~16

DIN

I/O1~16

tAS

(See Note 1)

tWC

tWP

tWR

tCW

tBW

tODW

tOEW

Hi-Z

tDS

tDH

VALID DATA IN

(See Note 2)

2005-08-09 9/18

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