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| TC55VCM416BTGN55 Datasheet, PDF (10/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM | |||
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TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
WRITE CYCLE 2 ( CE1 CONTROLLED)
Address
A0~A19
R/W
CE1
CE2
UB , LB
DOUT
I/O1~16
DIN
I/O1~16
tAS
Hi-Z
tWC
tWP
tWR
tCW
tCW
tBW
tBE tODW
tCOE
Hi-Z
tDS
tDH
VALID DATA IN
WRITE CYCLE 3 (CE2 CONTROLLED)
Address
A0~A19
R/W
CE1
CE2
UB , LB
DOUT
I/O1~16
DIN
I/O1~16
tAS
Hi-Z
tWC
tWP
tWR
tCW
tCW
tBW
tBE tODW
tCOE
Hi-Z
tDS
tDH
VALID DATA IN
2005-08-09 10/18
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