TC55VCM416BTGN55 Datasheet, PDF (5/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
DC CHARACTERISTICS (Ta = −40° to 85°C, V_DD = 2.3 to 3.6 V/1.65 to 2.2 V)
SYMBOL PARAMETER
TEST CONDITION
TC55VCM416BTGN55 TC55YCM416BTGN70
TC55VCM416BSGN55 TC55YCM416BSGN70
TC55VEM416BXGN55 TC55YEM416BXGN70 UNIT
MIN TYP MAX MIN TYP MAX
I_IL
Input Leakage
Current
V_IN = 0 V~V_DD
⎯ ⎯ ±1.0 ⎯ ⎯ ±1.0 μA
Output
I_OH
High Current ^{VOH = VDD − 0.5 V}
I_OL
Output
Low Current
V_OL = 0.4 V
−0.5 ⎯ ⎯ −0.5 ⎯ ⎯ mA
2.1 ⎯ ⎯ 2.1 ⎯ ⎯ mA
Output
I_LO
Leakage
Current
CE1 = V_IH or CE2 = V_IL or LB = UB = V_IH or
R/W = V_IL or OE = V_IH, V_OUT = 0 V~V_DD
⎯ ⎯ ±1.0 ⎯ ⎯ ±1.0 μA
I_DDO1
I_DDO2
Operating
Current
CE1 = V_IL and CE2 = V_IH and
R/W = V_IH
I_OUT = 0 mA,
Other Input = V_IH/V_IL
CE1 = 0.2 V and
CE2 = V_DD − 0.2 V and
R/W = V_DD − 0.2 V, I_OUT = 0 mA,
Other Input = V_DD − 0.2 V/0.2 V
t_cycle
MIN
1 μs
t_cycle
MIN
1 μs
⎯ ⎯ 20 ⎯ ⎯ 12
mA
⎯⎯ 8 ⎯⎯ 2
⎯ ⎯ 20 ⎯ ⎯ 12
mA
⎯⎯ 2 ⎯⎯ 2
I_DDS1
CE1 = V_IH or CE2 = V_IL
⎯ ⎯ 1 ⎯ ⎯ 1 mA
V_DD =
Ta = −40~85°C ⎯ ⎯ 15 ⎯ ⎯ ⎯
2.3~3.6 V
I_DDS2
Standby
Current
1)
CE1 = V_DD − 0.2 V,
CE2 = V_DD − 0.2 V
V_DD = 3.0 V
Ta = 25°C
Ta = −40~40°C
⎯
⎯
0.7 1.0
⎯2
⎯
⎯
⎯
⎯
⎯
⎯ μA
2) CE2 = 0.2 V
V_DD =
Ta = −40~85°C ⎯ ⎯ ⎯ ⎯ ⎯ 15
1.65~2.2 V
V_DD = 1.8 V Ta = 25°C
⎯ ⎯ ⎯ ⎯ 0.7 1.0
Note: In standby mode with CE1 ≥ V_DD − 0.2 V, these limits are assured for the condition CE2 ≥ V_DD − 0.2 V or CE2 ≤ 0.2 V.
The other input pins are not restricted of input level.
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
C_IN
C_OUT
Input Capacitance
Output Capacitance
V_IN = GND
V_OUT = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2005-08-09 5/18