TC55VCM416BTGN55 Datasheet, PDF (8/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
AC TEST CONDITIONS (Ta = −40 to 85°C, V_DD = 2.3 to 3.6 V/1.65 to 2.2 V)
PARAMETER
Input pulse level
Input rise and fall time
(Fig.1)
Timing measurements
Reference level
Output load
(Fig.2)
High
Low
t_R
t_F
V_TM
R1
R2
C_L
TEST CONDITION
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
V_DD × 0.7 + 0.2 V
V_DD − 0.2 V
0.2 V
0.2 V
1 V/ns
1 V/ns
1 V/ns
1 V/ns
V_DD × 0.5
V_DD × 0.5
2.3 V
V_DD × 0.5
V_DD × 0.5
1.65 V
810 Ω
470 Ω
1610 Ω
740 Ω
30 pF
30 pF
Fig.1 : Input rise and fall time
V_DD
GND
10%
90%
t_R
90%
10%
t_F
Fig.2 : Output load
V_TM
R1
Dout
R2
C_L
2005-08-09 8/18