TC55VCM416BTGN55 Datasheet, PDF (4/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
OPERATING MODE
MODE
Read
Write
Output Deselect
Standby
* = don't care
H = logic high
L = logic low
CE1 CE2 OE R/W LB
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
*
L
L
L
H
*
L
H
L
H
*
L
L
L
H
H
H
L
L
H
H
H
H
L
H
H
H
L
H
*
*
*
*
*
L
*
*
*
UB
I/O1~I/O8
L Output
L High-Z
H Output
L Input
L High-Z
H Input
L High-Z
L High-Z
H High-Z
* High-Z
* High-Z
I/O9~I/O16
Output
Output
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
POWER
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDS
I_DDS
MAXIMUM RATINGS
SYMBOL
RATING
V_DD
Power Supply Voltage
V_IN
Input Voltage
V_I/O
Input/Output Voltage
P_D
Power Dissipation
T_solder
T_stg
Soldering Temperature (10s)
Storage Temperature
TSOP type
BGA type
T_a
Operating Ambient Temperature
*1_{: −1.0 V when measured at a pulse width of 10ns}
VALUE
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
−0.3~4.2
−0.3^*1~4.2
−0.3~2.5
−0.3^*1~2.5
−0.5~V_DD + 0.5
0.6
−0.5~V_DD + 0.5
0.6
260
260
−55~150
−55~150
−55~125
−55~125
−40~85
−40~85
UNIT
V
V
V
W
°C
°C
°C
°C
DC RECOMMENDED OPERATING CONDITIONS (Ta = −40° to 85°C)
SYMBOL
PARAMETER
TEST CONDITION
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
MIN
MAX
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
MIN
MAX
UNIT
V_DD
Power Supply Voltage
⎯
2.3
3.6
1.65
2.2
2.3 V ≤ V_DD < 2.7 V
2.0
V_DD + 0.3
⎯
⎯
V_IH
Input High Voltage
2.7 V ≤ V_DD ≤ 3.6 V
2.2
V_DD + 0.3
⎯
⎯
1.65 V ≤ V_DD < 1.8 V
⎯
⎯
1.4
V_DD + 0.3
V
V_IL
Input Low Voltage
1.8 V ≤ V_DD ≤ 2.2 V
⎯
⎯
−0.3^*2
⎯
V_DD × 0.24
1.6
−0.3^*2
V_DD + 0.3
V_DD × 0.22
V_DH
Data Retention Supply Voltage
⎯
*2_{: −1.0 V when measured at a pulse width of 10ns}
1.5
3.6
1.0
2.2
2005-08-09 4/18