TC55VCM416BTGN55 Datasheet, PDF (1/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
Lead-Free
DESCRIPTION
The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate
process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit
technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle
time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at VDD = 3 V, Ta = 25°C,
typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1
and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory
access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM416B, TC55VEM416B,
TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The
TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package
(TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA.
FEATURES
• Low-power dissipation
Operating: 6 mW/MHz (typical)
• Power down features using CE1 and CE2
• Wide operating temperature range of −40° to 85°C
• Lead-Free
Part Number
Operating
Supply
Voltage
Package
TC55VCM416BTGN55
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
48-pin Plastic TSOP(I)
TC55VCM416BSGN55 2.3~3.6 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
Access time
(MAX)
Supply
Voltage
2.7~3.6 V
Supply
Voltage
2.3~3.6 V
Supply Current
At
At
Operating Standby
(MAX) (MAX)
At Data
Retention
55 ns
70 ns
55 ns
70 ns
20 mA 15 μA 1.5~3.6 V
TC55VEM416BXGN55
48-ball BGA
(8×11mm) (0.75mm ball pitch)
55 ns
70 ns
Part Number
Operating
Supply
Voltage
Package
TC55YCM416BTGN70
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
48-pin Plastic TSOP(I)
TC55YCM416BSGN70 1.65~2.2 V (12×14mm) (0.5mm pin pitch)
(Normal bent)
Access time
(MAX)
Supply
Voltage
1.8~2.2 V
Supply
Voltage
1.65~2.2 V
Supply Current
At
At
Operating Standby
(MAX) (MAX)
At Data
Retention
70 ns
85 ns
70 ns
85 ns
15 mA 15 μA 1.0~2.2 V
TC55YEM416BXGN70
48-ball BGA
(8×11mm) (0.75mm ball pitch)
70 ns
85 ns
2005-08-09 1/18