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TC55VCM416BTGN55 Datasheet, PDF (3/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
BLOCK DIAGRAM
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
CE
A1
A2
A3
A4
A8
A9
A10
A5
A6
A7
A17
A18
MEMORY CELL ARRAY
4,096 × 128 × 16 × 2Bank
(16,777,216)
VDD
GND
SENSE AMP
CLOCK
GENERATOR
COLUMN ADDRESS
DECODER
COLUMN ADDRESS
REGISTER
COLUMN ADDRESS
BUFFER
CE
A11 A13 A15 A0
A19 A12 A14 A16
R/W
OE
UB
LB
CE1
CE
CE2
2005-08-09 3/18