TC55VCM416BTGN55 Datasheet, PDF (7/18 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta = −40° to 85°C)
READ CYCLE
SYMBOL
PARAMETER
t_RC
t_ACC
t_CO1
t_CO2
t_OE
t_BA
t_COE
t_OEE
t_BE
t_OD
t_ODO
t_BD
t_OH
Read Cycle Time
Address Access Time
Chip Enable( CE1 ) Access Time
Chip Enable(CE2) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
TC55YCM416BTGN/BSGN70
TC55YEM416BXGN70
V_DD = 1.8~2.2 V
V_DD = 1.65~2.2 V
MIN
MAX
MIN
MAX
70
⎯
85
⎯
⎯
70
⎯
85
⎯
70
⎯
85
⎯
70
⎯
85
⎯
35
⎯
45
⎯
35
⎯
45
5
⎯
5
⎯
0
⎯
0
⎯
0
⎯
0
⎯
⎯
30
⎯
35
⎯
30
⎯
35
⎯
30
⎯
35
10
⎯
10
⎯
UNIT
ns
WRITE CYCLE
SYMBOL
PARAMETER
TC55YCM416BTGN/BSGN70
TC55YEM416BXGN70
V_DD = 1.8~2.2 V
V_DD = 1.65~2.2 V
MIN
MAX
MIN
MAX
UNIT
t_WC
Write Cycle Time
70
⎯
85
⎯
t_WP
Write Pulse Width
50
⎯
60
⎯
t_CW
Chip Enable to End of Write
55
⎯
65
⎯
t_BW
Data Byte Control to End of Write
55
⎯
65
⎯
t_AS
Address Setup Time
t_WR
Write Recovery Time
0
⎯
0
⎯
ns
0
⎯
0
⎯
t_ODW
R/W Low to Output High-Z
⎯
30
⎯
35
t_OEW
R/W High to Output Active
0
⎯
0
⎯
t_DS
Data Setup Time
30
⎯
35
⎯
t_DH
Data Hold Time
0
⎯
0
⎯
Note: t_OD, t_ODO, t_BD and t_ODW are specified in time when an output becomes high impedance, and are not judged depending on
an output voltage level.
2005-08-09 7/18