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TC9WMC1FK Datasheet, PDF (5/16 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic
TC9WMC1FK/FU,TC9WMC2FK/FU
(3.2)
Write (WRITE)
The Write instruction contains the 16 bits of data to be written into the specified memory
location. After the CS is driven High, a start bit is transferred followed by the WRITE instruction,
address and 16 bits of data. After the least significant bit (D0) of data is received on the rising
edge of SK, a write operation is triggered by the CS being pulled Low. It is not necessary to set
every bit in the memory array to “1” before writing data.
CS
Verify
1 2 3 4 5 6 7 8 9 10 25
SK
DI
1 0 1 A5 A4 A3 A2 A1 A0 D15 D0
DO
Hi-Z
Busy
Ready
Hi-Z
tPW
Figure 3. Write Timing Diagram (TC9WMC1)
CS
1 2 3 4 5 6 7 8 9 10 11 12 27
SK
Verify
DI
1 0 1 x A6 A5 A4 A3 A2 A1 A0 D15 D0
DO
Hi-Z
Busy
Ready
Hi-Z
tPW
Figure 4. Write Timing Diagram (TC9WMC2)
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2007-10-19