TC9WMC1FK Datasheet, PDF (11/16 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic

TC9WMC1FK/FU,TC9WMC2FK/FU
Absolute Maximum Ratings (Note) (GND = 0 V)
Characteristic
Symbol
Rating
Unit
Power supply voltage
Input voltage
Output voltage
V_CC
−0.3 to 7.0
V
V_IN
−0.3 to V_CC + 0.3
V
V_OUT
−0.3 to V_CC + 0.3
V
Power dissipation
300 (25°C,SM8)
P_D
mW
200 (25°C,US8)
Storage temperature
Operating temperature
T_stg
−55 to 125
°C
T_opr
−40 to 85
°C
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note) (GND = 0 V, T_opr = −40 to 85°C)
Characteristic
Symbol
Test Condition
Min Max
Supply voltage (for reading)
V_CC
⎯
1.8 3.6
Supply voltage (for writing)
V_CC
⎯
2.3 3.6
High-level input voltage
V_IH
2.7V ≤ V_CC ≤ 3.6 V
0.7 ×
V_CC
V_CC
1.8 V ≤ V_CC < 2.7 V
0.8 ×
V_CC
V_CC
Low-level input voltage
V_IL
2.7V ≤ V_CC ≤ 3.6 V
1.8 V ≤ V_CC < 2.7 V
0
0.3 ×
V_CC
0
0.2 ×
V_CC
Operating frequency
fsk
2.7V ≤ V_CC ≤ 3.6 V
0
2
1.8 V ≤ V_CC < 2.7 V
0
0.5
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Unit
V
V
V
V
MHz
Electrical Characteristics
DC Characteristics (V_CC = 1.8 to 3.6 V, GND = 0 V, T_opr = −40 to 85°C)
Characteristic
Symbol
1.8 ≤ V_CC < 2.3 V
Test Condition
Min
Max
2.3 ≤ V_CC < 2.7 V
Min
Max
2.7 ≤ V_CC ≤ 3.6 V
Min
Max
Unit
Input current
I_LI
Output leakage
current
I_LO
⎯
±1
⎯
±1
⎯
±1
μA
⎯
±1
⎯
±1
⎯
±1
μA
High-level output
voltage
Low-level output
voltage
Quiescent supply
current
V_OH
I_OH = −400 μA
⎯
⎯
⎯
⎯
⎯
⎯
V
I_OH = −100 μA V_CC − 0.2 ⎯ V_CC − 0.2 ⎯ V_CC − 0.2 ⎯
V_OL
I_OL = 2.1 mA
I_OL = 100 μA
⎯
⎯
⎯
⎯
⎯
⎯
V
⎯
0.2
⎯
0.2
⎯
0.2
I_CC1
⎯
2
⎯
2
⎯
2
μA
Supply current during
read
I_CC2
f_SK = 2 MHz
(Note)
⎯
0.5
⎯
1.0
⎯
1.5
mA
Supply current during
program
I_CC3
f_SK = 2 MHz
⎯
⎯
⎯
1.0
⎯
1.5
mA
Note: V_CC = 1.8 to 2.3 V @f_SK = 0.5 MHz
11
2007-10-19