TC9WMC1FK Datasheet, PDF (12/16 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic

TC9WMC1FK/FU,TC9WMC2FK/FU
AC Characteristics (V_CC = 1.8 to 3.6 V, GND = 0 V, T_opr = −40 to 85°C)
Characteristic
Symbol
SK clock frequency
SK clock pulse width
CS Low period
CS setup time
CS hold time
DI setup time
DI hold time
Propagation delay time
(Note)
Output disable time
Output enable time
f_SK
t_SKH
t_SKL
t_CS
t_CSS
t_CSH
t_DS
t_DH
t_PD
t_HZ
t_SV
1.8 ≤ V_CC < 2.3 V
Min
Max
0
0.5
2.0
⎯
2.0
⎯
0.5
⎯
1
⎯
0
⎯
0.4
⎯
0.4
⎯
⎯
2.0
0
1.0
0
1.0
2.3 ≤ V_CC < 2.7 V
Min
Max
0
1.5
0.5
⎯
0.5
⎯
0.3
⎯
0.4
⎯
0
⎯
0.2
⎯
0.2
⎯
⎯
1.0
0
0.5
0
0.5
2.7 ≤ V_CC ≤ 3.6 V
Min
Max
0
2
0.25
⎯
0.25
⎯
0.2
⎯
0.2
⎯
0
⎯
0.1
⎯
0.1
⎯
⎯
0.4
0
0.5
0
0.5
Note: C_L = 100 pF, R_L = 1 kΩ
Unit
MHz
μs
μs
μs
μs
μs
μs
μs
μs
μs
E²PROM Characteristics (GND = 0 V, 2.3 V ≤ V_CC ≤ 3.6 V, T_opr = −40 to 85°C)
Characteristic
Program time
Rewrite cycle
Data retention time
Symbol
t_PW
N_EW
t_RET
Test Condition
3.0V ≤ V_CC ≤ 3.6 V
2.3V ≤ V_CC < 3.0 V
Min Max Unit
⎯
10
ms
⎯
12
1 × 10⁵ ⎯ Times
10
⎯ Year
Capacitance Characteristics (Ta = 25°C)
Characteristic
Input capacitance
Output capacitance
Symbol
C_IN
C_O
Test Condition
Typ. Unit
V_CC (V)
3.3
4
pF
3.3
4
pF
12
2007-10-19