TH50VSF2580AASB Datasheet, PDF (31/50 Pages) Toshiba Semiconductor – SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

DATA PROTECTION
TH50VSF2580/2581AASB
The TH50VSF2580/2581AASB includes a function which guards against malfunction or data corruption.
Protection against Program/Erase Caused by Low Supply Voltage
To prevent malfunction at power-on or power-down, the device will not accept commands while VCCf is below
VLKO. In this state, command input is ignored.
If VCCf drops below VLKO during an Auto Operation, the device will terminate Auto-Program execution. In
this case, Auto operation is not executed again when VCCf return to recommended VCCf voltage Therefore,
command need to be input to execute Auto operation again.
When VCCf > VLKO, make up countermeasure to be input accurately command in system side please.
Protection against Malfunction Caused by Glitches
To prevent malfunction during operation caused by noise from the system, the device will not accept pulses
shorter than 3 ns(Typ.) input on WE , CEF or OE . However, if a glitch exceeding 3 ns(Typ.) occurs and the
glitch is input to the device malfunction may occur.
The device uses standard JEDEC commands. It is conceivable that, in extreme cases, system noise may be
misinterpreted as part of a command sequence input and that the device will acknowledge it. Then, even if a
proper command is input, the device may not operate. To avoid this possibility, clear the Command Register
before command input. In an environment prone to system noise, Toshiba recommend input of a software or
hardware reset before command input.
Protection against Malfunction at Power-on
To prevent damage to data caused by sudden noise at power-on, when power is turned on with WE = CEF
= VIL , the device does not latch the command on the first rising edge of WE or CEF . Instead, the device
automatically Resets the Command Register and enters Read Mode.
2001-10-26 31/50