BQ500101 Datasheet, PDF (8/20 Pages) Texas Instruments – NexFET Power Stage

bq500101
SLPS585 – MARCH 2016
8 Application and Implementation
www.ti.com
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The Power Stage bq500101 is a highly optimized design for wireless power transmitter applications using
NexFET devices with a 5-V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield
the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards
a more systems centric environment. The high-performance gate driver device integrated in the package helps
minimize the parasitics and results in extremely fast switching of the power MOSFETs. System level
performance curves such as Power Loss, Safe Operating Area and normalized graphs allow engineers to predict
the product performance in the actual application.
8.2 Typical Application
+19V
C1
+5V
C2
C3
4
VIN
1
VDD
2
VDD
8
PWM
5
VSW
7
BOOT
6
BOOT_R
C4
3
PGND
9
PAD
bq500101
L1
R1
C5
R2
R4
R3
R5
V_SENSE
R7
R6
R8
C6
4
IN+
5
IN-
1
GND
3
V+
C7
2
6
GND
OUT
bq500100
+3.3V
C9
DPWM-A
DPWM-B
V33
PWM_RAIL
RAIL+
RAIL-
DPWM-A
V_SENSE
DPWM-B
I_SENSE
AGND / DGND
bq501210
I_SENSE
R9
C8
V_SENSE
+5V
I_SENSE
C10
C11
4
VIN
1
VDD
2
VDD
8
PWM
5
VSW
7
BOOT
6
BOOT_R
3
PGND
9
PAD
bq500101
L1
C13
C12
C14
5
VSW
7
BOOT
6
BOOT_R
3
PGND
9
PAD
4
VIN
1
VDD
2
VDD
C15
+5V
C16
8
PWM
bq500101
DPWM-A
Figure 2. Application Schematic
DPWM-B
8
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated