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| BQ500101 Datasheet, PDF (5/20 Pages) Texas Instruments – NexFET Power Stage | |||
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www.ti.com
6.5 Electrical Characteristics
TA = 25°C, VDD = POR to 5.5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
PLOSS
Power
loss (1)
VIN = 10 V, VDD = 5 V, ISW = 5 A, ÆSW = 130 kHz,
LSW = 6 µH , TJ = 25°C, Duty Cycle = 50%
Power
loss (1)
VIN = 10 V, VDD = 5 V, ISW = 5 A, ÆSW = 130 kHz,
LSW = 6 µH , TJ = 125°C, Duty Cycle = 50%
VIN
IQ
VIN quiescent current
PWM = Floating, VDD = 5 V, VIN= 24 V
VDD
IDD
Standby supply current
PWM = Float
IDD
Operating supply current
PWM = 50% Duty cycle, ÆSW = 130 kHz
POWER-ON RESET AND UNDERVOLTAGE LOCKOUT
VDD Rising
VDD Falling
Power-on reset
UVLO
Hysteresis
PWM I/O SPECIFICATIONS
RI
Input impedance
Pull up to VDD
Pull down (to GND)
VIH
VIL
VIH
VTS
tTHOLD(off1)
Logic level high
Logic level low
Hysteresis
Tri-state voltage
Tri-state activation time
(falling) PWM
tTHOLD(off2)
Tri-state activation time (rising)
PWM
t3RD(PWM)
Tri-state exit time PWM (1)
BOOTSTRAP SWITCH
VFBST
IRLEAK
Forward voltage
Reverse leakage(1)
IF = 10 mA
VBOOT â VDD = 25 V
(1) Specified by design
bq500101
SLPS585 â MARCH 2016
MIN TYP MAX UNIT
0.53
W
0.68
W
1 µA
130
µA
2
mA
4.15 V
3.7
V
0.2
V
1700
800
2.65
0.2
1.3
60
60
kΩ
0.6
V
2
ns
100 ns
120
240 mV
2 µA
Copyright © 2016, Texas Instruments Incorporated
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