DS90C187_14 Datasheet, PDF (6/28 Pages) Texas Instruments – Low Power 1.8V Dual Pixel FPD-Link (LVDS) Serializer

DS90C187
SNLS401B – FEBRUARY 2012 – REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings ⁽¹⁾
Supply Voltage (V_CC)
LVCMOS Input Voltage
LVDS Driver Output Voltage
LVDS Output Short Circuit Duration
Junction Temperature
Storage Temperature
Package Derating: θ_JA
ESD Ratings
HBM
CDM
MM
−0.3V to +2.5V
−0.3V to VDD + 0.3V
−0.3V to +3.6V
Continuous
+150°C
−65°C to +150°C
35.1°C/W above +22°C
> ±8 kV
> ±1.25 kV
>±250 V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to
imply that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Recommended Operating Conditions
Supply Voltage
Operating Free Air Temperature (T_A)
Differential Load Impedance
Supply Noise Voltage
Min
1.71
−10
80
Nom
1.80
+25
100
Max
1.89
+70
120
<90
Unit
V
°C
Ω
mV_p-p
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
Min
LVCMOS DC SPECIFICATIONS
V_IH
High Level Input Voltage
V_IL
Low Level Input Voltage
I_IN
Input Current
V_IN = 0V or V_DD =
1.71 V to 1.89 V
0.65V_DD
GND
- 10
LVDS DRIVER DC SPECIFICATIONS
V_OD
Differential Output Voltage
R_L = 100Ω
Figure 4
VODSEL = V_IH
160
(320)
VODSEL = V_IL
110
(220)
ΔV_OD
Change in V_OD between
Complimentary Output States
V_OS
Offset Voltage
0.8
ΔV_OS
Change in V_OS between
Complimentary Output States
I_OS
Output Short Circuit Current
V_OUT = GND, VODSEL = V_DD
-45
SUPPLY CURRENT
IDDT1
IDDT2
Serializer Worst Case Supply
Current (includes load current)
IDDT3
Checkerboard
pattern,
R_L = 100 Ω,
18B = V_IL,
VODSEL = V_IH,
V_DD = 1.89 V,
Figure 2
f = 105 MHz,
MODE[1:0] = 00
(SISO)
f = 185 MHz,
MODE[1:0] = 01
(SIDO)
f = 105 MHz,
MODE[1:0] = 10
(DIDO)
Typ
±1
300
(600)
180
(360)
0.9
−35
60
95
100
Max
Unit
V_DD
V
0.35V_DD
V
+10
µA
450
(900)
300
(600)
50
mV
(mV_P-P)
mV
(mV_P-P)
mV
1.0
V
50
mV
−25
mA
85
mA
140
mA
150
mA
6
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