THS4551 Datasheet, PDF (4/70 Pages) Texas Instruments – Low-Noise, Precision, 150-MHz, Fully Differential Amplifier

THS4551
SBOS778A – APRIL 2016 – REVISED AUGUST 2016
www.ti.com
NAME
FB–
FB+
IN–
IN+
NC
OUT–
OUT+
PD
VOCM
VS–
VS+
PIN
RGT ⁽¹⁾
NO.
RUN
1
—
4
—
3
6
2
4
—
2, 8
11
1
10
9
12
3
9
7
13-16
5
5, 6, 7, 8
10
DGK
—
—
1
8
—
5
4
7
2
6
3
Pin Functions
I/O
DESCRIPTION
O
Inverting (negative) output feedback
O
Noninverting (positive) output feedback
I
Inverting (negative) amplifier input
I
Noninverting (positive) amplifier input
—
No internal connection
O
Inverting (negative) amplifier output
O
Noninverting (positive) amplifier output
I
Power down. PD = logic low = power off mode; PD = logic high = normal
operation.
I
Common-mode voltage input
I
Negative power-supply input
I
Positive power-supply input
(1) Solder the exposed thermal pad (RGT package) to a heat-spreading power or ground plane. This pad is electrically isolated from the
die, but must be connected to a power or ground plane and not floated.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
MIN
MAX
UNIT
Voltage
Supply voltage, (V_S+) – (V_S–)
Input/output voltage range
Differential input voltage
5.5
(V_S–) – 0.5
(V_S+) + 0.5
V
±1
Current
Continuous input current
Continuous output current⁽²⁾
Continuous power dissipation
±10
mA
±20
See the Thermal Information and
Thermal Analysis sections
Maximum junction
150
Temperature
Operating free-air, T_A
Storage, T_stg
–40
125
°C
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Long-term continuous current for electro-migration limits.
7.2 ESD Ratings
V_(ESD) Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Charged device model (CDM), per JEDEC specification JESD22-C101⁽²⁾
VALUE
±2500
±1250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
4
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