LMH2832 Datasheet, PDF (36/46 Pages) Texas Instruments – LMH2832 Fully Differential, Dual, 1.1-GHz, Digital Variable-Gain Amplifier

LMH2832
SBOS709A – JULY 2016 – REVISED JULY 2016
12 Layout
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12.1 Layout Guidelines
With a small bandwidth greater than 1 GHz, layout for the LMH2832 is critical and nothing can be neglected. In
order to simplify board design, the LMH2832 has on-chip resistors that reduce the affect of off-chip capacitance.
For this reason, make sure that the ground layer below the LMH2832 is not cut. The recommendation to not cut
the ground plane under the amplifier input and output pins is different than many other high-speed amplifiers, but
the reason is that parasitic inductance is more harmful to the LMH2832 performance than parasitic capacitance.
By leaving the ground layer under the device intact, parasitic inductance of the output and power traces is
minimized. The DUT portion of the evaluation board layout is shown in Figure 64.
The EVM uses long-edge capacitors for the decoupling capacitors, which reduces series resistance and
increases the resonant frequency. Vias are also placed to the power planes before the bypass capacitors.
Although not evident in the top layer, two vias are used at the capacitor in addition to the two vias underneath the
device.
The output-matching resistors are 0402 size and are placed very close to the amplifier output pins, which
reduces both parasitic inductance and capacitance. The use of 0603 output-matching resistors produces a
measurable decrease in bandwidth.
When the signal is on a 50-Ω or 75-Ω controlled impedance transmission line, the layout then becomes much
less critical. The transition from the 50-Ω or 75-Ω transmission line to the amplifier pins is the most critical area.
12.2 Layout Example
Figure 64. Layout Example
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