DS90CR285MTDX Datasheet, PDF (3/25 Pages) Texas Instruments – DS90CR285/DS90CR286 +3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link-66 MHz

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Typical Application
DS90CR285, DS90CR286
SNLS130C – MARCH 1999 – REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings ⁽¹⁾⁽²⁾
Supply Voltage (V_CC)
CMOS/TTL Input Voltage
CMOS/TTL Output Voltage
LVDS Receiver Input Voltage
LVDS Driver Output Voltage
LVDS Output Short Circuit Duration
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 4 sec.)
Solder Reflow Temperature
Maximum Package Power
Dissipation @ +25°C
Package Derating:
ESD Rating (HBM, 1.5 kΩ, 100 pF)
DS90CR285MTD
DS90CR286MTD
DS90CR285MTD
DS90CR286MTD
−0.3V to +4V
−0.3V to (V_CC + 0.3V)
−0.3V to (V_CC + 0.3V)
−0.3V to (V_CC + 0.3V)
−0.3V to (V_CC + 0.3V)
Continuous
+150°C
−65°C to +150°C
+260°C
1.63 W
1.61 W
12.5 mW/°C above +25°C
12.4 mW/°C above +25°C
> 7 kV
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to
imply that the device should be operated at these limits. “Electrical Characteristics” specify conditions for device operation.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Recommended Operating Conditions
Supply Voltage (V_CC)
Operating Free Air Temperature (T_A)
Receiver Input Range
Supply Noise Voltage (V_CC)
Min
Nom
3.0
3.3
−40
+25
0
Max
3.6
+85
2.4
Units
V
°C
V
100 mV_PP
Copyright © 1999–2013, Texas Instruments Incorporated
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