OMAP4430 Datasheet, PDF (142/443 Pages) Texas Instruments – Multimedia Device

OMAP4430
Public Version
SWPS041D – DECEMBER 2010 – REVISED JANUARY 2012
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Table 3-12. Audio McBSP / PDM / DMIC DC Electrical Characteristics (continued)
PARAMETER
MIN
NOM
MAX
UNIT
V_OH
Output high-level threshold (I_OH = –4 mA)
V_OL
Output low-level threshold (I_OL = 4 mA)
1.8-V Mode
0.75 * vdds_dv_bank2
V
0.25 * vdds_dv_bank2
V
V_IH
V_IL
V_HYS(3)
V_OH
V_OL
Input high-level threshold
Input low-level threshold
Input hysteresis voltage
Output high-level threshold (I_OH = –4 mA)
Output low-level threshold (I_OL = 4 mA)
0.65 * vdds_dv_bank2
–0.3
150
vdds_dv_bank2 – 0.45
vdds_dv_bank2 + 0.3
V
0.35 * vdds_dv_bank2
V
mV
V
0.45
V
(1) Output transition time measured between 20% to 80% of PAD voltage.
(2) In vdds_dv_y, y can have the value: bank1 or bank2 depending on the ball used. For more information on a ball and the corresponding
power, see Table 2-1, POWER [9] column.
(3) V_HYS is the magnitude of the difference between the positive-going threshold voltage V_T+ and the negative-going threshold voltage V_T–.
(4) Depending on the programming mode, different output load and transition time are available following the targeted maximum frequency,
transmission line or output transition time.
(5) The following signals abe_mcbsp2_clkx, abe_mcbsp2_dr, abe_mcbsp2_dx, abe_mcbsp2_fsx, abe_mcbsp1_clkx, abe_mcbsp1_dr,
abe_mcbsp1_dx, abe_mcbsp1_fsx, abe_pdm_ul_data, abe_pdm_dl_data, abe_pdm_frame, abe_pdm_lb_clk, abe_dmic_clk1,
abe_dmic_din[3:1], abe_clks (bottom balls: AD27 / AD26 / AD25 / AC28 / AC26 / AC25 / AB25 / AC27 / AG25 / AF25 / AE25 / AF26 /
AE24 / AF24 / AG24 / AH24 / AH26) are compliant with the JEDEC standard for the following parameters:
V_OL = 0.2 V and V_OH = VDDS – 0.2 V when absolute value of I_OH / I_OL = 100 µA.
3.3.8 McSPI DC Electrical Characteristics
Table 3-13 summarizes the McSPI dc electrical characteristics in multiplexing mode 0.
NOTE
For more information on the IO cell configurations (MB[1:0] and LB0, SC[1:0]), see the
Control Module / Control Module Functional Description / Functional Register Description /
Signal Integrity Parameter Control Registers With Pad Group Assignment section of the
OMAP4430 TRM.
Table 3-13. McSPI DC Electrical Characteristics
PARAMETER
MIN
Signals in Mode 0: mcspi1_clk, mcspi1_somi, mcspi1_simo, mcspi1_cs[1:0]
(Bottom Balls: AF22 / AE22 / AG22 / AE23 / AF23)
C_LOAD Load capacitance
SC[1:0] = 00
4
SC[1:0] = 01
2
SC[1:0] = 10
7
t_OT
Output transition time (rise time, t_R or fall SC[1:0] = 00
1
time, t_F) measured between 10% to 90%
of PAD voltage, minimum at the
SC[1:0] = 01
0.4
minimum load and maximum at the
SC[1:0] = 10
0.6
maximum load
1.2-V Mode
V_IH
Input high-level threshold
V_IL
V_HYS(3)
Input low-level threshold
Input hysteresis voltage
V_OH
Output high-level threshold (I_OH = –4 mA)
V_OL
Output low-level threshold (I_OL = 4 mA)
1.8-V Mode
0.65 * vdds_dv_bank3
–0.3
135
0.75 * vdds_dv_bank3
V_IH
Input high-level threshold
V_IL
Input low-level threshold
0.65 * vdds_dv_bank3
–0.3
NOM
MAX
60
21
33
15
5
7
vdds_dv_bank3 + 0.3
0.35 * vdds_dv_bank3
0.25 * vdds_dv_bank3
vdds_dv_bank3 + 0.3
0.35 * vdds_dv_bank3
UNIT
pF
ns
V
V
mV
V
V
V
V
142 Electrical Characteristics
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