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| DRV8305_16 Datasheet, PDF (12/59 Pages) Texas Instruments – Three Phase Gate Driver | |||
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DRV8305
SLVSCX2B â AUGUST 2015 â REVISED FEBRUARY 2016
Electrical Characteristics (continued)
PVDD = 4.4 to 45 V, TA = 25°C, unless specified under test condition
PARAMETER
TEST CONDITIONS
PROTECTION CONTROL
tpd,E-L
Delay, error event to all
gates low
tpd,E-SD
Delay, error event to
nFAULTx low
FET CURRENT PROTECTION (VDS SENSING)
VDS_LEVEL = 00000
VDS_LEVEL = 00001
VDS_LEVEL = 00010
VDS_LEVEL = 00011
VDS_LEVEL = 00100
VDS_LEVEL = 00101
VDS_LEVEL = 00110
VDS_LEVEL = 00111
VDS_LEVEL = 01000
VDS_LEVEL = 01001
VDS_LEVEL = 01010
VDS_LEVEL = 01011
VDS_LEVEL = 01100
VDS_LEVEL = 01101
VDS_LEVEL = 01110
VDS_TRIP
Drain-source voltage
protection limit
VDS_LEVEL = 01111
VDS_LEVEL = 10000
VDS_LEVEL = 10001
VDS_LEVEL = 10010
VDS_LEVEL = 10011
VDS_LEVEL = 10100
VDS_LEVEL = 10101
VDS_LEVEL = 10110
VDS_LEVEL = 10111
VDS_LEVEL = 11000
VDS_LEVEL = 11001
VDS_LEVEL = 11010
VDS_LEVEL = 11011
VDS_LEVEL = 11100
VDS_LEVEL = 11101
VDS_LEVEL = 11110
VDS_LEVEL = 11111
TVDS = 00
TVDS = 01
tVDS
VDS sense deglitch time
TVDS = 10
TVDS = 11
TBLANK = 00
tBLANK
VDS sense blanking time
TBLANK = 01
TBLANK = 10
TBLANK = 11
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MIN
TYP
24
7
0.06
0.068
0.076
0.086
0.097
0.109
0.123
0.138
0.155
0.175
0.197
0.222
0.25
0.282
0.317
0.358
0.403
0.454
0.511
0.576
0.648
0.73
0.822
0.926
1.043
1.175
1.324
1.491
1.679
1.892
2.131
2.131
0
1.75
3.5
7
0
1.75
3.5
7
MAX UNIT
µs
µs
V
µs
µs
12
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