BQ24618_15 Datasheet, PDF (11/43 Pages) Texas Instruments – System Power Selector and Low

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bq24618
SLUSA55B – OCTOBER 2010 – REVISED APRIL 2015
Electrical Characteristics (continued)
4.7 V ≤ V_VCC ≤ 28 V, 0°C < T_J < 125°C, typical values are at T_A = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
V_{ACDRV_REG}
ACFET drive voltage
V_{ACDRV_REG} = V_VCC – V_ACDRV when V_VCC > 5 V and
ACFET is on
4.2
7
V
AC / BAT MOSFET DRIVERS TIMING
Driver dead time
Dead time when switching between AC and BAT
10
μs
BATTERY DETECTION
t_WAKE
I_WAKE
t_DISCHARGE
I_DISCHARGE
I_FAULT
V_WAKE
V_DISCH
Wake time
Wake current
Discharge time
Discharge current
Fault current after a time-out fault
Wake threshold (with respect to V_REG)
Discharge threshold
Maximum time charge is enabled
R_SENSE = 10 mΩ
Maximum time discharge current is applied
Voltage on VFB to detect battery absent during wake
Voltage on VFB to detect battery absent during
discharge
500
50
125
1
8
2
50
1.55
ms
200 mA
s
mA
mA
mV
V
PWM HIGH-SIDE DRIVER (HIDRV)
R_{DS_HI_ON}
High-side driver (HSD) turnon
resistance
V_BTST – V_PH = 5.5 V
3.3
6
Ω
R_{DS_HI_OFF}
V_{BTST_REFRESH}
High-side driver turnoff resistance
Bootstrap refresh comparator threshold
voltage
V_BTST – V_PH = 5.5 V
V_BTST – V_PH when low side refresh pulse is requested
1
1.3
Ω
4.0
4.2
V
PWM LOW-SIDE DRIVER (LODRV)
R_{DS_LO_ON}
Low-side driver (LSD) turnon resistance
R_{DS_LO_OFF}
Low-side driver turnoff resistance
PWM DRIVERS TIMING
4.1
7
Ω
1
1.4
Ω
Driver dead time
Dead time when switching between LSD and HSD, no
load at LSD and HSD
30
ns
PWM OSCILLATOR
V_{RAMP_HEIGHT}
PWM ramp height
PWM switching frequency⁽¹⁾
As percentage of VCC
7%
510
600
690 kHz
INTERNAL SOFT START (8 steps to regulation current ICHG)
Soft-start steps
8
step
Soft-start step time
1.6
ms
CHARGER SECTION POWER-UP SEQUENCING
Charge enable delay after power up
Delay from CE = 1 until charger is allowed to turn on
1.5
s
LOGIC IO PIN CHARACTERISTICS (CE, STAT1, STAT2, PG)
V_{IN_LO}
V_{IN_HI}
V_{BIAS_CE}
V_{OUT_LO}
CE input-low threshold voltage
CE input-high threshold voltage
2.1
CE input bias current
V = 3.3 V (CE has internal 1-MΩ pulldown resistor)
STAT1, STAT2, PG output low
saturation voltage
Sink current = 5 mA
0.8
V
6 μA
0.5
V
I_{OUT_HI}
Leakage current
V = 32 V
1.2 µA
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